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| 2SK3775-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Foot Print Equivalent circuit schematic Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 300 300 32 2.4 128 30 32 597.4 27 20 5 270 2.40 +150 -55 to +150 Unit V V A A A V A mJ mJ Remarks VGS=-30V S1 : Source G : Gate D : Drain Ta=25C S2 : Source Note *1:Surface mounted on 1000mm2,t=1.6mm Note *2 Note *3 Note *4 FR-4 PCB(Drain pad area:500mm2) Note *2:Tch < 150C,Repetitive and Non-repetitive = Note *3:StartingTch=25C,IAS=13A,L=6.13mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and avalanch current. kV/s VDS< 300V = See to the `Avalanche Energy' graph kV/s Note *5 Note *4:Repetitive rating:Pulse width limited by Tc=25C W maximum channel temperature. Ta=25C Note*1 See to the `Transient Theemal impedance' C C graph < Note *5:IF< -ID, -di/dt=50A/s,VCC BVDSS,Tch< 150C = = = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=300V VGS=0V VDS=240V VGS=0V VGS=30V VDS=0V ID=16A VGS=10V ID=16A VDS=25V VDS=25V VGS=0V f=1MHz VCC=180V ID=16A VGS=10V RGS=10 VCC=150V ID=32A VGS=10V IF=32A VGS=0V Tch=25C IF=32A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 300 3.0 Typ. Max. 5.0 25 250 100 0.13 Units V V A nA S pF 12 0.10 24 1970 2955 335 502 20 30 29 44 7.5 11 57 86 7 10.5 44.5 67.0 18.0 27.0 13.5 20.5 0.90 1.50 270 3.0 ns nC V ns C Thermalcharacteristics Symbol Test Conditions Rth(ch-c) channel to case Thermal resistance Rth(ch-a) channel to ambient Rth(ch-a) *1 channel to ambient *1 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) www.fujielectric.co.jp/fdt/scd Item Min. Typ. Max. 0.463 87.0 52.0 Units C/W C/W C/W 1 2SK3775-01 Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 400 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 4 300 3 PD [W] 200 PD [W] 2 100 1 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] Tc [C] 80 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 100 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 70 20V 10V 60 8V 10 50 ID [A] 40 ID[A] 7V 1 6.5V VGS=6.0V 0.1 0 30 20 10 0 0 4 8 12 16 20 24 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 0.30 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6V 6.5V 7V 0.25 RDS(on) [ ] 10 0.20 8V 0.15 10V 20V 0.10 gfs [S] 1 0.05 0.1 0.1 0.00 1 10 100 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3775-01 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=16A,VGS=10V FUJI POWER MOSFET 0.5 7.0 6.5 6.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 0.4 5.5 5.0 max. VGS(th) [V] RDS(on) [ ] 4.5 4.0 3.5 3.0 min. 0.3 0.2 max. typ. 0.1 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=32A,Tch=25C 10 4 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 12 Ciss Vcc= 60V 10 150V 240V 10 3 VGS [V] C [pF] 8 10 2 Coss 6 4 10 2 1 Crss 0 0 10 20 30 40 50 60 70 80 10 0 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=180V,VGS=10V,RG=10 10 10 2 td(off) IF [A] t [ns] td(on) tf 1 10 1 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3775-01 FUJI POWER MOSFET 700 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=32A IAS=13A 100 90 80 70 60 50 40 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 600 500 IAS=20A EAV [mJ] 400 300 IAS=32A 200 Rth(ch-a) [C/W] 30 20 100 10 0 0 25 50 75 100 125 150 0 1000 2000 3000 2 0 4000 5000 starting Tch [C] Drain Pad Area [mm ] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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